We present the most downloaded papers of the pss journal family from November.

 physica status solidi (RRL)

• R. Sbiaa, H. Meng, S. N. Piramanayagam
  Materials with perpendicular magnetic anisotropy for magnetic random access memory [Review@RRL]
  Phys. Status Solidi RRL 2011, vol. 5, p. 413
• R. R. LaPierre, A. C. E. Chia, S. J. Gibson, C. M. Haapamaki, J. Boulanger, R. Yee, P. Kuyanov, J. Zhang, N. Tajik, N. Jewell, K. M. A. Rahman
  III–V nanowire photovoltaics: Review of design for high efficiency [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 815
• A. Mazid Munshi, Helge Weman
  Advances in semiconductor nanowire growth on graphene [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 713
• Binghai Yan, Delin Zhang, Claudia Felser
  Topological surface states of Bi₂Se₃ coexisting with Se vacancies [Rapid Research Letter]
  Phys. Status Solidi RRL 2013, vol. 7, p. 148
• Judy J. Cha, Kristie J. Koski, Yi Cui
  Topological insulator nanostructures [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 15
• Liang He, Xufeng Kou, Kang L. Wang
  Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 50
• Even, Jacky; Pedesseau, Laurent; Jancu, Jean-Marc; Katan, Claudine
  DFT and k · p modelling of the phase transitions of lead and tin halide perovskites for photovoltaic cells [rrl solar]
  Phys. Status Solidi RRL, 10.1002/pssr.201308183
• Lukas Müchler, Frederick Casper, Binghai Yan, Stanislav Chadov, Claudia Felser
  Topological insulators and thermoelectric materials [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 91
• Jérôme Cayssol, Balázs Dóra, Ferenc Simon, Roderich Moessner
  Floquet topological insulators [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 101
• Anna Isaeva, Bertold Rasche, Michael Ruck
  Bismuth-based candidates for topological insulators: Chemistry beyond Bi₂Te₃ [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 39
• Markus Wohlgenannt
  Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices [Review@RRL]
  Phys. Status Solidi RRL 2012, vol. 6, p. 229
• Jan Carl Budich, Björn Trauzettel
  From the adiabatic theorem of quantum mechanics to topological states of matter [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 109
• B. Hoex, M. C. M. van de Sanden, J. Schmidt, R. Brendel, W. M. M. Kessels
  Surface passivation of phosphorus-diffused n⁺-type emitters by plasma-assisted atomic-layer deposited Al₂O₃ [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 4
• Zuocheng Zhang, Xiao Feng, Minghua Guo, Yunbo Ou, Jinsong Zhang, Kang Li, Lili Wang, Xi Chen, Qikun Xue, Xucun Ma, Ke He, Yayu Wang
  Transport properties of Sb₂Te₃/Bi₂Te₃ topological insulator heterostructures [Rapid Research Letter]
  Phys. Status Solidi RRL 2013, vol. 7, p. 142
• Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan, Yong P. Chen
  Structural and electronic properties of highly doped topological insulator Bi₂Se₃ crystals [Rapid Research Letter]
  Phys. Status Solidi RRL 2013, vol. 7, p. 133

 physica status solidi (a)

• Anthony M. Diamond, Luca Corbellini, K. R. Balasubramaniam, Shiyou Chen, Shuzhi Wang, Tyler S. Matthews, Lin-Wang Wang, Ramamoorthy Ramesh, Joel W. Ager
  Copper-alloyed ZnS as a p-type transparent conducting material [Advanced Materials Physics]
  Phys. Status Solidi A 2012, vol. 209, p. 2101
• B. Lüssem, M. Riede, K. Leo
  Doping of organic semiconductors [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 9
• Wolfgang Brütting, Jörg Frischeisen, Tobias D. Schmidt, Bert J. Scholz, Christian Mayr
  Device efficiency of organic light-emitting diodes: Progress by improved light outcoupling [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 44
• V. N. Jmerik, E. V. Lutsenko, S. V. Ivanov
  Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers [Feature Article]
  Phys. Status Solidi A 2013, vol. 210, p. 439
• Thomas Walther, David J. Norris, Yang Qiu, Andrew Dobbie, Maksym Myronov, David R. Leadley
  The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy [Original Paper]
  Phys. Status Solidi A 2013, vol. 210, p. 187
• Akram A. Khosroabadi, Palash Gangopadhyay, Binh Duong, Jayan Thomas, Ajaya K. Sigdel, Joseph J. Berry, Thomas Gennett, N. Peyghambarian, Robert A. Norwood
  Fabrication, electrical and optical properties of silver, indium tin oxide (ITO), and indium zinc oxide (IZO) nanostructure arrays [Advanced Materials Physics]
  Phys. Status Solidi A 2013, vol. 210, p. 831
• M. Benyoucef, M. Usman, T. Alzoubi, J. P. Reithmaier
  Pre-patterned silicon substrates for the growth of III–V nanostructures [Feature Article]
  Phys. Status Solidi A 2012, vol. 209, p. 2402
• Joachim Piprek
  Efficiency droop in nitride-based light-emitting diodes [Feature Article]
  Phys. Status Solidi A 2010, vol. 207, p. 2217
• Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
  Cuprous iodide – a p-type transparent semiconductor: history and novel applications [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 1671
• Sebastian Reineke, Marc A. Baldo
  Recent progress in the understanding of exciton dynamics within phosphorescent OLEDs [Feature Article]
  Phys. Status Solidi A 2012, vol. 209, p. 2341
• F. Jelezko, J. Wrachtrup
  Single defect centres in diamond: A review [Review Article]
  Phys. Status Solidi A 2006, vol. 203, p. 3207
• Simone Hofmann, Mauro Furno, Björn Lüssem, Karl Leo, Malte C. Gather
  Investigation of triplet harvesting and outcoupling efficiency in highly efficient two-color hybrid white organic light-emitting diodes [Advanced Materials Physic]
  Phys. Status Solidi A 2013, vol. 210, p. 1467
• Dieter Weller, Oleksandr Mosendz, Gregory Parker, Simone Pisana, Tiffany S. Santos
  L1₀ FePtX–Y media for heat-assisted magnetic recording [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 1245
• Carolin M. Fella, Alexander R. Uhl, Yaroslav E. Romanyuk, Ayodhya N. Tiwari
  Cu₂ZnSnSe₄ absorbers processed from solution deposited metal salt precursors under different selenization conditions [Editor’s Choice]
  Phys. Status Solidi A 2012, vol. 209, p. 1043
• R. Coehoorn, P. A. Bobbert
  Effects of Gaussian disorder on charge carrier transport and recombination in organic semiconductors [Feature Article]
  Phys. Status Solidi A 2012, vol. 209, p. 2354

 physica status solidi (b)

• Markus Morgenstern
  Scanning tunneling microscopy and spectroscopy of graphene on insulating substrates [Feature Article]
  Phys. Status Solidi B 2011, vol. 248, p. 2423
• Justin P. Bergfield, Mark A. Ratner
  Forty years of molecular electronics: Non-equilibrium heat and charge transport at the nanoscale [Review Article]
  Phys. Status Solidi B 2013, vol. 250, p. 2249
• B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning
  Binary copper oxide semiconductors: From materials towards devices [Review Article]
  Phys. Status Solidi B 2012, vol. 249, p. 1487
• B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A. V. Rodina
  Bound exciton and donor–acceptor pair recombinations in ZnO [Feature Article]
  Phys. Status Solidi B 2004, vol. 241, p. 231
• G. Tkachov, E. M. Hankiewicz
  Spin-helical transport in normal and superconducting topological insulators [Review Article]
  Phys. Status Solidi B 2013, vol. 250, p. 215
• Henning Sirringhaus, Tomo Sakanoue, Jui-Fen Chang
  Charge-transport physics of high-mobility molecular semiconductors [Feature Article]
  Phys. Status Solidi B 2012, vol. 249, p. 1655
• Tauc, J.; Grigorovici, R.; Vancu, A.
  Optical Properties and Electronic Structure of Amorphous Germanium [Original Paper]
  Phys. Status Solidi B 1966, vol. 15, p. 627
• Chen Li, Vladimir Stepanenko, Mei-Jin Lin, Wenjing Hong, Frank Würthner, Thomas Wandlowski
  Charge transport through perylene bisimide molecular junctions: An electrochemical approach [Original Paper]
  Phys. Status Solidi B 2013, vol. 250, p. 2458
• Karl-Heinz Ernst
  Molecular chirality at surfaces [Review Article]
  Phys. Status Solidi B 2012, vol. 249, p. 2057
• Suresh Babu Kalidindi, Roland A. Fischer
  Covalent organic frameworks and their metal nanoparticle composites: Prospects for hydrogen storage [Feature Article]
  Phys. Status Solidi B 2013, vol. 250, p. 1119
• C. Klingshirn
  ZnO: From basics towards applications [Review Article]
  Phys. Status Solidi B 2007, vol. 244, p. 3027
• Mingxing Piao, Gyutae Kim, Gary P. Kennedy, Siegmar Roth, Urszula Dettlaff-Weglikowska
  Preparation and characterization of expanded graphite polymer composite films for thermoelectric applications [Original Paper]
  Phys. Status Solidi B 2013, vol. 250, p. 2529
• Kai Richter, Paul S. Campbell, Tobias Baecker, Agnes Schimitzek, Damla Yaprak, Anja-Verena Mudring
  Ionic liquids for the synthesis of metal nanoparticles [Feature Article]
  Phys. Status Solidi B 2013, vol. 250, p. 1152
• Bässler, H.
  Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study [Review Article]
  Phys. Status Solidi B 1993, vol. 175, p. 15

 physica status solidi (c)

• Tobias Knoblauch, Martin Dressel
  Charge disproportionation in (TMTTF)₂X (X = PF₆, AsF₆ and SbF₆) investigated by infrared spectroscopy [ISCOM 2011 – Contributed Article]
  physica status solidi c 2012, vol. 9, p. 1158
• M. Botzakaki, A. Kerasidou, N. Xanthopoulos, D. Skarlatos, S. Kennou, S. Ladas, S. N. Georga, C. A. Krontiras
  Electrical characteristics of ALD-deposited Al₂O₃ thin films on p-type germanium substrates [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 137
• Hideaki Araki, Yuki Kubo, Kazuo Jimbo, Win Shwe Maw, Hironori Katagiri, Makoto Yamazaki, Koichiro Oishi, Akiko Takeuchi
  Preparation of Cu₂ZnSnS₄ thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors [Contributed Article]
  physica status solidi c 2009, vol. 6, p. 1266
• Takuo Sasaki, Andrew G. Norman, Manuel J. Romero, Mowafak M. Al-Jassim, Masamitu Takahasi, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi
  Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1640
• Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta
  Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O₃ assistance [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1565
• Takumi Aizawa, Kunihiko Tanaka, Kota Tagami, Hisao Uchiki
  Investigation of ZnO:Al window layer of Cu₂ZnSnS₄ thin film solar cells prepared by non-vacuum processing [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1050
• Yunyou Lu, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li, Kevin J. Chen
  Characterization of V_T-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1397
• Raj K. Jana, Gregory L. Snider, Debdeep Jena
  On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1469
• Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi
  XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1557
• Noritoshi Maeda, Hideki Hirayama
  Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1521
• Manish Mathew, Hassanet Sodabanalu, Masakazu Sugiyama, Yoshiaki Nakano
  Orange/yellow InGaN/AlN nanodisk light emitting diodes [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1525
• Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Yuichiro Kitamura, Toshiya Tabuchi, Koh Matsumoto
  High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1353