We present the most downloaded papers from the physica status solidi family of journal in June, spanning hot subject areas such as in the brandnew Review Article by Bruno Meyer et al. on copper oxide semiconductors in pss (b) and much more!

physica status solidi (RRL)

• R. Sbiaa, H. Meng, S. N. Piramanayagam
  Materials with perpendicular magnetic anisotropy for magnetic random access memory [Review@RRL]
  Phys. Status Solidi RRL 2011, vol. 5, p. 413
• Markus Wohlgenannt
  Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices [Review@RRL]
  Phys. Status Solidi RRL 2012, vol. 6, p. 229
• B. Hoex, M. C. M. van de Sanden, J. Schmidt, R. Brendel, W. M. M. Kessels
  Surface passivation of phosphorus-diffused n⁺-type emitters by plasma-assisted atomic-layer deposited Al₂O₃ [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 4
• Jan Nievendick, Jan Specht, Martin Zimmer, Lorenz Zahner, William Glover, David Stüwe, Jochen Rentsch
  Formation of a honeycomb texture for multicrystalline silicon solar cells using an inkjetted mask [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 7
• E. Fortunato, R. Martins
  Where science fiction meets reality? With oxide semiconductors! [Expert Opinion]
  Phys. Status Solidi RRL 2011, vol. 5, p. 336
• K. P. O’Donnell, M. Auf der Maur, A. Di Carlo, K. Lorenz, the SORBET consortium
  It’s not easy being green: Strategies for all-nitrides, all-colour solid state lighting [Expert Opinion]
  Phys. Status Solidi RRL 2012, vol. 6, p. 49
• Hee-Jo Lee, Eunho Kim, Won-Jun Lee, Jongwan Jung
  RF transmission properties of graphene monolayers with width variation [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 19
• Prasanna Sivasubramani, Tae Joo Park, Brian E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Yu Cao, Debdeep Jena, Huili (Grace) Xing, Robert M. Wallace, Jiyoung Kim
  In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O₃-oxidized GaN substrates [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 22
• C. Caspers, M. Müller, A. X. Gray, A. M. Kaiser, A. Gloskovskii, C. S. Fadley, W. Drube, C. M. Schneider
  Electronic structure of EuO spin filter tunnel contacts directly on silicon [Rapid Research Letter]
  Phys. Status Solidi RRL 2011, vol. 5, p. 441
• Takeshi Tanaka, Huaping Liu, Shunjiro Fujii, Hiromichi Kataura
  From metal/semiconductor separation to single-chirality separation of single-wall carbon nanotubes using gel [Review@RRL]
  Phys. Status Solidi RRL 2011, vol. 5, p. 301

 physica status solidi (a)

• Fathi Elfituri, Ben Hourahine
  Simple models for InGaN alloys [Original Paper]
  Phys. Status Solidi A 2012, vol. 209, p. 79
• Carolin M. Fella, Alexander R. Uhl, Yaroslav E. Romanyuk, Ayodhya N. Tiwari
  Cu₂ZnSnSe₄ absorbers processed from solution deposited metal salt precursors under different selenization conditions [Editor’s Choice]
  Phys. Status Solidi A 2012, vol. 209, p. 1043
• F. Jelezko, J. Wrachtrup
  Single defect centres in diamond: A review [Review Article]
  Phys. Status Solidi A 2006, vol. 203, p. 3207
• D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta, C. J. Humphreys
  High-efficiency InGaN/GaN quantum well structures on large area silicon substrates [Original Paper]
  Phys. Status Solidi A 2012, vol. 209, p. 13
• Yu-fei Meng, Chih-shiue Yan, Szczesny Krasnicki, Qi Liang, Joseph Lai, Haiyun Shu, Thomas Yu, Andrew Steele, Ho-kwang Mao, Russell J. Hemley
  High optical quality multicarat single crystal diamond produced by chemical vapor deposition [Original Paper]
  Phys. Status Solidi A 2012, vol. 209, p. 101
• Marcos Soldera, Kurt Taretto, Thomas Kirchartz
  Comparison of device models for organic solar cells: Band-to-band vs. tail states recombination [Original Paper]
  Phys. Status Solidi A 2012, vol. 209, p. 207
• Joachim Piprek
  Efficiency droop in nitride-based light-emitting diodes [Feature Article]
  Phys. Status Solidi A 2010, vol. 207, p. 2217
• Lili Cui, Xiaofeng Lu, Danming Chao, Hongtao Liu, Yongxin Li, Ce Wang
  Graphene-based composite materials with high dielectric permittivity via an in situ reduction method [Original Paper]
  Phys. Status Solidi A 2011, vol. 208, p. 459
• Philipp Drechsel, Peter Stauss, Werner Bergbauer, Patrick Rode, Stephanie Fritze, Alois Krost, Toni Markurt, Tobias Schulz, Martin Albrecht, Henning Riechert, Ulrich Steegmüller
  Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates [Original Paper]
  Phys. Status Solidi A 2012, vol. 209, p. 427
• Marius Grundmann, Heiko Frenzel, Alexander Lajn, Michael Lorenz, Friedrich Schein, Holger von Wenckstern
  Transparent semiconducting oxides: materials and devices [Feature Article]
  Phys. Status Solidi A 2010, vol. 207, p. 1437

 physica status solidi (b)

• Binary copper oxide semiconductors: From materials towards devices [Review Article]
  Phys. Status Solidi B, 10.1002/pssb.201248128
• Janik Wolters, Günter Kewes, Andreas W. Schell, Nils Nüsse, Max Schoengen, Bernd Löchel, Tobias Hanke, Rudolf Bratschitsch, Alfred Leitenstorfer, Thomas Aichele, Oliver Benson
  Coupling of single nitrogen-vacancy defect centers in diamond nanocrystals to optical antennas and photonic crystal cavities [Editor’s Choice]
  Phys. Status Solidi B 2012, vol. 249, p. 918
• Daniel Dregely, Klas Lindfors, Jens Dorfmüller, Mario Hentschel, Merle Becker, Jörg Wrachtrup, Markus Lippitz, Ralf Vogelgesang, Harald Giessen
  Plasmonic antennas, positioning, and coupling of individual quantum systems [Feature Article]
  Phys. Status Solidi B 2012, vol. 249, p. 666
• Alan J. Drew, Gregory Szulczewski, Laura Nuccio, William P. Gillin
  The role of interfaces in organic spin valves revealed through spectroscopic and transport measurements [Feature Article]
  Phys. Status Solidi B 2012, vol. 249, p. 9
• Ado Jorio, Erlon H. Martins Ferreira, Marcus V. O. Moutinho, Fernando Stavale, Carlos A. Achete, Rodrigo B. Capaz
  Measuring disorder in graphene with the G and D bands [Original Paper]
  Phys. Status Solidi B 2010, vol. 247, p. 2980
• B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A. V. Rodina
  Bound exciton and donor–acceptor pair recombinations in ZnO [Feature Article]
  Phys. Status Solidi B 2004, vol. 241, p. 231
• Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study [Review Article]
  Phys. Status Solidi B , p. 15
• C. Klingshirn
  ZnO: From basics towards applications [Review Article]
  Phys. Status Solidi B 2007, vol. 244, p. 3027
• Optical Properties and Electronic Structure of Amorphous Germanium [Original Paper]
  Phys. Status Solidi B , p. 627

 physica status solidi (c)

• G. Xiong, U. Pal, J. G. Serrano, K. B. Ucer, R. T. Williams
  Photoluminesence and FTIR study of ZnO nanoparticles: the impurity and defect perspective [Original Paper]
  physica status solidi c 2006, vol. 3, p. 3577
• Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono
  Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO_4–x : Optical analyses and first-principle calculations [Contributed Article]
  physica status solidi c 2008, vol. 5, p. 3098
• J. Pejchal, Y. Kagamitani, D. Ehrentraut, H. Sato, H. Odaka, H. Hatanaka, M. Nikl, A. Yoshikawa, H. Fukumura, T. Fukuda
  Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals [Original Paper]
  physica status solidi c 2007, vol. 4, p. 942
• Yujin Hori, Chihoko Mizue, Tamotsu Hashizume
  Interface state characterization of ALD-Al₂O₃/GaN and ALD-Al₂O₃/AlGaN/GaN structures [ICFSI-13 – Contributed Article]
  physica status solidi c 2012, vol. 9, p. 1356
• Mingyuan Zhu, Yemin Hu, Ying Li, Hongming Jin, Zhenzhen Zhu
  Effect of magnetic field on phase morphology transformation of MnO₂ nanostructures in a hydrothermal process [Contributed Article]
  physica status solidi c 2012, vol. 9, p. 122
• Noriko Moritake, Yuki Fukui, Masatoshi Oonuki, Kunihiko Tanaka, Hisao Uchiki
  Preparation of Cu₂ZnSnS₄ thin film solar cells under non-vacuum condition [Contributed Article]
  physica status solidi c 2009, vol. 6, p. 1233
• Yue-Ming Hsin, Tsung-Yu Ke, Geng-Yen Lee, Jen-Inn Chyi, Hsien-Chin Chiu
  A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time [ICNS-9 – Contributed Article]
  physica status solidi c 2012, vol. 9, p. 949