As computing power continues to grow, new memory and processing technologies are required. Cross-point (X-point) memory technology is a new and promising starting point for next-generation memory applications, in particular when combined with artificial intelligence.
In Advanced Science, Prof. Huaqiang Wu and Prof. Bin Gao from Tsinghua University, Prof. Peng Zhou from Fudan University, and co-workers set out to improve the current drawbacks of cross-point memory using highly ordered silver nanodots in the cross-point memory arrays.
The use of silver nanodots, as opposed to previous thin-film architectures, gives better performance for memory reset operations, as they can withstand higher reset currents than their contemporary counterparts. The device also exhibits good thermal stability up to 200 °C.
The fabricated device demonstrated a very high performance, including being electroforming-free and having very high selectivity, with an on/off ratio of 109. This selector device could be widely used in 2D cross-point memory or 3D memory structures.