We present the most downloaded papers from the pss family of journals from May.
physica status solidi (RRL)
- LaPierre, R. R.; Chia, A. C. E.; Gibson, S. J.; Haapamaki, C. M.; Boulanger, J.; Yee, R.; Kuyanov, P.; Zhang, J.; Tajik, N.; Jewell, N.; Rahman, K. M. A.
III–V nanowire photovoltaics: Review of design for high efficiency [Review@RRL]
Phys. Status Solidi RRL, 10.1002/pssr.201307109 - R. Sbiaa, H. Meng, S. N. Piramanayagam
Materials with perpendicular magnetic anisotropy for magnetic random access memory [Review@RRL]
Phys. Status Solidi RRL 2011, vol. 5, p. 413 - Liang He, Xufeng Kou, Kang L. Wang
Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 50 - Judy J. Cha, Kristie J. Koski, Yi Cui
Topological insulator nanostructures [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 15 - Manuel Angst
Ferroelectricity from iron valence ordering in rare earth ferrites? [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 383 - Anna Isaeva, Bertold Rasche, Michael Ruck
Bismuth-based candidates for topological insulators: Chemistry beyond Bi2Te3 [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 39 - M. Veldhorst, M. Snelder, M. Hoek, C. G. Molenaar, D. P. Leusink, A. A. Golubov, H. Hilgenkamp, A. Brinkman
Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 26 - Lukas Müchler, Frederick Casper, Binghai Yan, Stanislav Chadov, Claudia Felser
Topological insulators and thermoelectric materials [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 91 - Lucas Barreto, Marco Bianchi, Dandan Guan, Richard Hatch, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann
Electron–phonon coupling in the two-dimensional electron gas on Bi2Se3 [Rapid Research Letter]
Phys. Status Solidi RRL 2013, vol. 7, p. 136 - Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan, Yong P. Chen
Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals [Rapid Research Letter]
Phys. Status Solidi RRL 2013, vol. 7, p. 133 - Haijun Zhang, Shou-Cheng Zhang
Topological insulators from the perspective of first-principles calculations [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 72 - Saptarshi Das, Joerg Appenzeller
Screening and interlayer coupling in multilayer MoS2 [Rapid Research Letter]
Phys. Status Solidi RRL 2013, vol. 7, p. 268 - M. R. Scholz, J. Sánchez-Barriga, D. Marchenko, A. Varykhalov, A. Volykhov, L. V. Yashina, O. Rader
Intact Dirac cone of Bi2Te3 covered with a monolayer Fe [Rapid Research Letter]
Phys. Status Solidi RRL 2013, vol. 7, p. 139 - Yihua Wang, Nuh Gedik
Circular dichroism in angle-resolved photoemission spectroscopy of topological insulators [Review@RRL]
Phys. Status Solidi RRL 2013, vol. 7, p. 64
physica status solidi (a)
- B. Lüssem, M. Riede, K. Leo
Doping of organic semiconductors [Review Article]
Phys. Status Solidi A 2013, vol. 210, p. 9 - Wolfgang Brütting, Jörg Frischeisen, Tobias D. Schmidt, Bert J. Scholz, Christian Mayr
Device efficiency of organic light-emitting diodes: Progress by improved light outcoupling [Review Article]
Phys. Status Solidi A 2013, vol. 210, p. 44 - Hofmann, Simone; Furno, Mauro; Lüssem, Björn; Leo, Karl; Gather, Malte C.
Investigation of triplet harvesting and outcoupling efficiency in highly efficient two-color hybrid white organic light-emitting diodes [Advanced Materials Physics]
Phys. Status Solidi A, 10.1002/pssa.201329107 - Prashant K. Sarswat, Michael L. Free
Demonstration of a sol–gel synthesized bifacial CZTS photoelectrochemical cell [Original Paper]
Phys. Status Solidi A 2011, vol. 208, p. 2861 - Anthony M. Diamond, Luca Corbellini, K. R. Balasubramaniam, Shiyou Chen, Shuzhi Wang, Tyler S. Matthews, Lin-Wang Wang, Ramamoorthy Ramesh, Joel W. Ager
Copper-alloyed ZnS as a p-type transparent conducting material [Advanced Materials Physics]
Phys. Status Solidi A 2012, vol. 209, p. 2101 - Hollander, Matthew J.; Agrawal, Ashish; Bresnehan, Michael S.; LaBella, Michael; Trumbull, Kathleen A.; Cavalero, Randal; Snyder, David W.; Datta, Suman; Robinson, Joshua A.
Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties [Advanced Materials Physics]
Phys. Status Solidi A, 10.1002/pssa.201228683 - Marisa Di Sabatino, Gaute Stokkan
Defect generation, advanced crystallization, and characterization methods for high-quality solar-cell silicon [Feature Article]
Phys. Status Solidi A 2013, vol. 210, p. 641 - Sebastian Reineke, Marc A. Baldo
Recent progress in the understanding of exciton dynamics within phosphorescent OLEDs [Feature Article]
Phys. Status Solidi A 2012, vol. 209, p. 2341 - Khosroabadi, Akram A.; Gangopadhyay, Palash; Duong, Binh; Thomas, Jayan; Sigdel, Ajaya K.; Berry, Joseph J.; Gennett, Thomas; Peyghambarian, N.; Norwood, Robert A.
Fabrication, electrical and optical properties of silver, indium tin oxide (ITO), and indium zinc oxide (IZO) nanostructure arrays [Advanced Materials Physics]
Phys. Status Solidi A 2013, vol. 210, p. 831 - Berginc, Marko; Krašovec, Urša Opara; Topič, Marko
Evaluation of the recombination processes in DSSC by measuring the open circuit voltage over a wide illumination intensity range [Original Paper]
Phys. Status Solidi A, 10.1002/pssa.201329044 - Joachim Piprek
Efficiency droop in nitride-based light-emitting diodes [Feature Article]
Phys. Status Solidi A 2010, vol. 207, p. 2217 - Cattin, L.; Bernède, J. C.; Morsli, M.
Toward indium-free optoelectronic devices: Dielectric/metal/dielectric alternative transparent conductive electrode in organic photovoltaic cells [Feature Article]
Phys. Status Solidi A, 10.1002/pssa.201228089 - Maria Luisa Grilli, Anna Sytchkova, Sylvia Boycheva, Angela Piegari
Transparent and conductive Al-doped ZnO films for solar cells applications [Original Paper]
Phys. Status Solidi A 2013, vol. 210, p. 748 - Jun Liu, Jing Wang, Saijun Huang, Hsi-An Chen, Gufeng He
Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers [Editor’s Choice]
Phys. Status Solidi A 2013, vol. 210, p. 489
physica status solidi (b)
- B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning
Binary copper oxide semiconductors: From materials towards devices [Review Article]
Phys. Status Solidi B 2012, vol. 249, p. 1487 - Qimiao Si, Silke Paschen
Quantum phase transitions in heavy fermion metals and Kondo insulators [Review Article]
Phys. Status Solidi B 2013, vol. 250, p. 425 - B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A. V. Rodina
Bound exciton and donor–acceptor pair recombinations in ZnO [Feature Article]
Phys. Status Solidi B 2004, vol. 241, p. 231 - Henning Sirringhaus, Tomo Sakanoue, Jui-Fen Chang
Charge-transport physics of high-mobility molecular semiconductors [Feature Article]
Phys. Status Solidi B 2012, vol. 249, p. 1655 - P. Ester, S. Stufler, S. de Michaelis Vasconcellos, M. Bichler, A. Zrenner
Ramsey fringes in a single InGaAs/GaAs quantum dot [Original Paper]
Phys. Status Solidi B 2006, vol. 243, p. 2229 - G. Tkachov, E. M. Hankiewicz
Spin-helical transport in normal and superconducting topological insulators [Review Article]
Phys. Status Solidi B 2013, vol. 250, p. 215 - V. Zólyomi, J. Koltai, J. Kürti
Resonance Raman spectroscopy of graphite and graphene [Feature Article]
Phys. Status Solidi B 2011, vol. 248, p. 2435 - Karl-Heinz Ernst
Molecular chirality at surfaces [Review Article]
Phys. Status Solidi B 2012, vol. 249, p. 2057 - Bässler, H.
Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study [Review Article]
Phys. Status Solidi B 1993, vol. 175, p. 15 - C. Klingshirn
ZnO: From basics towards applications [Review Article]
Phys. Status Solidi B 2007, vol. 244, p. 3027 - Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, Stuart P. Speakman, Caterina Ducati, William I. Milne, Andrew J. Flewitt
High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films [Editor’s Choice]
Phys. Status Solidi B 2013, vol. 250, p. 957 - Tauc, J.; Grigorovici, R.; Vancu, A.
Optical Properties and Electronic Structure of Amorphous Germanium [Original Paper]
Phys. Status Solidi B 1966, vol. 15, p. 627 - Daniel Dregely, Klas Lindfors, Jens Dorfmüller, Mario Hentschel, Merle Becker, Jörg Wrachtrup, Markus Lippitz, Ralf Vogelgesang, Harald Giessen
Plasmonic antennas, positioning, and coupling of individual quantum systems [Feature Article]
Phys. Status Solidi B 2012, vol. 249, p. 666 - Ado Jorio, Erlon H. Martins Ferreira, Marcus V. O. Moutinho, Fernando Stavale, Carlos A. Achete, Rodrigo B. Capaz
Measuring disorder in graphene with the G and D bands [Original Paper]
Phys. Status Solidi B 2010, vol. 247, p. 2980 - F. J. Manjón, R. Vilaplana, O. Gomis, E. Pérez-González, D. Santamaría-Pérez, V. Marín-Borrás, A. Segura, J. González, P. Rodríguez-Hernández, A. Muñoz, C. Drasar, V. Kucek, V. Muñoz-Sanjosé
High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3 [Feature Article]
Phys. Status Solidi B 2013, vol. 250, p. 669
physica status solidi (c)
- Gurieva, G.; Guc, M.; Bruk, L. I.; Izquierdo-Roca, V.; Pérez Rodríguez, A.; Schorr, S.; Arushanov, E.
Cu2ZnSnS4 thin films grown by spray pyrolysis: characterization by Raman spectroscopy and X-ray diffraction [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200856 - Aono, Masami; Yoshitake, Koichiro; Miyazaki, Hisashi
XPS depth profile strudy of CZTS thin films prepared by spray pyrolysis [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200796 - Atsushi A. Yamaguchi, Kazunobu Kojima
Optical polarization and anisotropic gain characteristics in semipolar and nonpolar InGaN quantum well lasers [ICNS-9 – Contributed Article]
physica status solidi c 2012, vol. 9, p. 834 - G. Xiong, U. Pal, J. G. Serrano, K. B. Ucer, R. T. Williams
Photoluminesence and FTIR study of ZnO nanoparticles: the impurity and defect perspective [Original Paper]
physica status solidi c 2006, vol. 3, p. 3577 - Nomura, Takeshi; Maeda, Tsuyoshi; Takei, Kouji; Morihama, Masaru; Wada, Takahiro
Crystal structures and band-gap energies of Cu2Sn(S,Se)3 (0≤ x ≤1.0) solid solution [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200867 - Kaigawa, Ryuji; Hirata, Satomi; Sasaki, Muneo; Klenk, R.
Rapid direct preparation of Cu2ZnSn(S1–x,Sex)4 films using microwave irradiation [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200842 - Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono
Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4–x : Optical analyses and first-principle calculations [Contributed Article]
physica status solidi c 2008, vol. 5, p. 3098 - Yen-Hsiang Fang, Yi-Keng Fu, Rong Xuan, Ren-Hao Jiang, Chia-Feng Lin
Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching [ICNS-9 – Contributed Article]
physica status solidi c 2012, vol. 9, p. 761 - Yamaguchi, T.; Kawamoto, K.; Oura, S.; Niiyama, S.; Imanishi, T.
Preparation of Cu2ZnSnSe4 thin films by selenization of precursor evaporated from Cu2ZnSnSe4 compound [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200810 - Aihara, Naoya; Araki, Hideaki; Takeuchi, Akiko; Jimbo, Kazuo; Katagiri, Hironori
Fabrication of Cu2SnS3 thin films by sulfurization of evaporated Cu-Sn precursors for solar cells [Contributed Article]
Phys. Status Solidi C, 10.1002/pssc.201200866 - Hideaki Araki, Yuki Kubo, Kazuo Jimbo, Win Shwe Maw, Hironori Katagiri, Makoto Yamazaki, Koichiro Oishi, Akiko Takeuchi
Preparation of Cu2ZnSnS4 thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors [Contributed Article]
physica status solidi c 2009, vol. 6, p. 1266 - Jung-Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka
Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE [Contributed Article]
Phys. Status Solidi C 2013, vol. 10, p. 417 - Thomas Marron, Shinya Takashima, Zhongda Li, T. Paul Chow
Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices [ICNS-9 – Contributed Article]
physica status solidi c 2012, vol. 9, p. 907
